Lead Design Engineer - Cambridge, Cambridgeshire, United Kingdom - IC Resources

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    Description

    This is an opportunity for a Lead RF IC Design or MMIC Designer to join an expanding company working developing high tech communications and radar technologies.


    As the Lead RF IC Design Engineer you will be taking a lead role responsible for leading the design of Ku/ Ka band RF Transmitters & Receivers using deep sub-micron technologies for next generation of satellite communications and will be responsible for delivery of ASIC Specifications, architecture design, circuit design & verification, review, IC qualification & production release.


    You will be leading and mentoring a team of RF IC Design engineers and will work closely across the organisation from layout & test teams to systems, antenna, hardware teams to ensure on-time delivery of leading ASICs.

    You will also assist in choosing the fabrication process & technology vendors, setup process flow and ensuring design governance, create product development plans and technology roadmaps.


    Industry degree qualified you will have a minimum of 10 years of experience in the design of RF ICs in deep sub- micron technologies (preferably 15GHz or higher operating frequencies) with chip lead experience in 2 or more successful tape-outs.

    ASIC specifications, architecture design, top level design & verification, block level designs and on-time tape-out of ASICs.


    • Design of transmitter & receiver blocks in Ku/ Ka band in deep sub- micron CMOS technologies.
    • Hands-on block-level design of various RF blocks such as PA, LNA, VGA, Phase shifters, Power Splitters/ combiners.
    • Delivering high quality RF/ Analog blocks with leading edge performance using innovative architectures and circuit implementations.
    • Co-ordinate and manage design activities with other colleagues.
    • Collaborate with CAD, process technology, package design, Antenna & hardware teams.
    • Document own work and lead design reviews.
    • Experience is desired in 22nm FDSOI or other sub 45nm CMOS process nodes for RF/ High speed ICs and/ or experience in mmW/ RF IC design, LNA design and RF PAs.
    You will have the ability to interact with engineering teams across multiple disciplines during ASIC project stream development. Visa sponsorship is available for the successful applicant.